**HMC891ALP5E: A High-Performance 1 to 8 GHz GaAs pHEMT MMIC Low-Noise Amplifier**

The **HMC891ALP5E** is a state-of-the-art **GaAs pHEMT MMIC Low-Noise Amplifier (LNA)** designed to deliver exceptional performance across a broad frequency range from **1 to 8 GHz**. This amplifier is engineered to meet the demanding requirements of modern microwave systems, including radar, electronic warfare (EW), communications infrastructure, and test and measurement equipment, where high gain and minimal signal degradation are critical.

A key feature of this amplifier is its **remarkably low noise figure**, typically **1.4 dB**, which ensures that very weak signals can be amplified with minimal added noise. This is crucial for maintaining the integrity and sensitivity of the entire receiver chain. Complementing this is its high linearity, with an output third-order intercept point (OIP3) of up to **+30 dBm**, allowing the LNA to handle strong interfering signals without significant distortion.

The device provides a high **small-signal gain of 18 dB**, which remains exceptionally flat over the entire bandwidth. This high gain helps to suppress the noise contribution from subsequent stages in the system. The **HMC891ALP5E** is fabricated using a high-reliability **0.15 µm GaAs pHEMT process**, which is the foundation of its excellent performance and consistency. The MMIC is housed in a compact, RoHS-compliant **5x5 mm QFN leadless package**, making it suitable for space-constrained applications and simplifying PCB design and assembly.

Operating from a single positive supply of **+5V**, the amplifier typically draws 100 mA of current. It is also equipped with internal DC blocking capacitors on both the RF input and output ports, further simplifying the external biasing circuitry required for integration. For robustness, the design includes **ESD protection** on the RF ports, safeguarding the sensitive semiconductor components from electrostatic discharge events during handling and operation.

**ICGOODFIND:** The HMC891ALP5E stands out as a superior solution for broadband low-noise amplification. Its combination of an ultra-low noise figure, high gain, and excellent linearity across the 1-8 GHz spectrum makes it an ideal choice for advancing the performance of next-generation RF and microwave receivers.

**Keywords:** Low-Noise Amplifier (LNA), GaAs pHEMT, Broadband, High Linearity, Microwave