Infineon IPW60R099P6 CoolMOS™ P6 Power Transistor: Datasheet, Application Notes, and Features

The relentless pursuit of higher efficiency, power density, and reliability in power electronics is driven by innovations in semiconductor technology. At the forefront of this evolution is Infineon's CoolMOS™ P6 family, with the IPW60R099P6 standing out as a benchmark in superjunction MOSFET performance. Designed for demanding switch-mode power supplies (SMPS), this transistor sets a new standard for efficiency in applications such as server and telecom power supplies, industrial motor drives, and solar inverters.

Key Features and Technological Advanceness

The IPW60R099P6 is a 600 V, 11.7 A (TC=100°C) N-channel power MOSFET housed in a TO-247 package. Its standout specification is its ultra-low typical on-state resistance (R DS(on)) of just 99 mΩ. This exceptionally low resistance is the cornerstone of its performance, leading to significantly reduced conduction losses. This translates directly into higher overall system efficiency and reduced heat generation, allowing for more compact designs or lower cooling requirements.

Beyond low R DS(on), the CoolMOS™ P6 technology incorporates several Infineon innovations:

Enhanced Switching Performance: The transistor features optimized internal dynamic characteristics, which contribute to lower switching losses. This is crucial for high-frequency operation, enabling designers to shrink the size of magnetic components and capacitors.

Superior Body Diode Robustness: The intrinsic body diode is engineered for high softness and reverse recovery performance. This reduces voltage overshoot and electromagnetic interference (EMI), simplifying filter design and improving system reliability, especially in hard-switching topologies like power factor correction (PFC) circuits.

High Avalanche Ruggedness: The device is designed to withstand high energy pulses, making it exceptionally robust against unexpected voltage spikes and stressful operating conditions in industrial environments.

Application Notes and Design Considerations

Integrating the IPW60R099P6 into a design requires careful attention to standard high-power MOSFET practices. The datasheet provides essential guidance:

Gate Driving: A low-impedance gate driver is recommended to quickly charge and discharge the input capacitance (C iss), ensuring fast and efficient switching. A gate-source voltage (V GS) of typically +15 V is used for full enhancement, with a negative turn-off voltage (e.g., -5 V to -10 V) often employed to enhance noise immunity and prevent spurious turn-on.

Thermal Management: Despite its high efficiency, effective heat sinking is paramount. The TO-247 package offers excellent thermal performance, but designers must ensure the maximum junction temperature (T J max = 150°C) is never exceeded under worst-case operating conditions. Utilizing thermal interface materials and proper PCB layout with sufficient copper area is critical.

Layout: A proper high-frequency layout is essential to minimize parasitic inductance in the power loop (drain-source) and gate loop. This involves using short and wide traces, placing decoupling capacitors close to the device pins, and separating power and signal grounds to ensure stable operation and minimize ringing.

Datasheet: The Primary Design Resource

The official datasheet for the IPW60R099P6 is an indispensable resource for any engineer. It contains all the vital information needed for a successful design, including:

Absolute maximum ratings and thermal characteristics.

Detailed electrical characteristics (static and dynamic).

Typical output and switching characteristics charts.

Safe Operating Area (SOA) graphs, both for DC and pulsed operation.

Package outlines and mechanical data.

ICGOOODFIND

The Infineon IPW60R099P6 CoolMOS™ P6 represents a significant leap in high-voltage power MOSFET technology. Its combination of ultra-low on-state resistance, excellent switching characteristics, and inherent robustness makes it an ideal choice for designers aiming to push the boundaries of efficiency and power density in modern AC-DC and DC-DC conversion systems.

Keywords: CoolMOS P6, Ultra-Low RDS(on), High-Efficiency SMPS, Power Transistor, High Switching Performance.