**HMC909LP4ETR: A High-Performance GaAs pHEMT MMIC Low-Noise Amplifier from 5 to 20 GHz**

The **HMC909LP4ETR** represents a significant advancement in microwave monolithic integrated circuit (MMIC) technology, specifically engineered to meet the demanding requirements of modern wideband communication, electronic warfare (EW), and radar systems. Operating across an impressive **5 to 20 GHz frequency range**, this amplifier is a cornerstone component for applications where both high frequency and low noise are paramount.

Fabricated on a **high-performance GaAs pHEMT (Pseudomorphic High Electron Mobility Transistor)** process, the HMC909LP4ETR delivers exceptional electrical characteristics. Its core strength lies in its **ultra-low noise figure of just 1.8 dB**, which is critical for preserving signal integrity and sensitivity in the receiver chain, especially when amplifying extremely weak signals. Complementing this is a high **small-signal gain of 18 dB**, which ensures that signals are amplified sufficiently for downstream processing without requiring additional stages that could degrade the overall noise performance.

The amplifier is designed for ease of integration into a variety of systems. It is housed in a compact, RoHS-compliant **4x4 mm LP4 leadless package**, making it suitable for high-density PCB designs. The device is **unconditionally stable**, minimizing design concerns about oscillations, and incorporates on-chip DC blocking capacitors at both RF input and output, simplifying the external biasing circuitry. It requires a single positive supply voltage, typically between +3V to +5V, drawing a modest 65 mA of current.

Key performance metrics include an output power at 1 dB compression (P1dB) of +15 dBm and an output third-order intercept point (OIP3) of +27 dBm, underscoring its capability to handle signals with good linearity and dynamic range. These features make it an ideal driver amplifier for mixers or a high-dynamic-range LNA in sensitive receiver applications.

**ICGOOODFIND:** The HMC909LP4ETR stands out as a superior solution for broadband low-noise amplification, offering an exceptional blend of ultra-low noise, high gain, and robust linearity from 5 to 20 GHz. Its GaAs pHEMT design and practical packaging make it an indispensable component for advancing the performance of next-generation RF and microwave systems.

**Keywords:** GaAs pHEMT, Low-Noise Amplifier, MMIC, Broadband, Microwave